晶振系列
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陶瓷霧化片 wuhuapian -
陶瓷晶振 taocijingzhen -
32.768K Clock crystal -
貼片晶振 SMDcrystal -
石英晶振 Quartz Crystal -
聲表面濾波器 Quartz Crystal -
聲表面諧振器 resonator -
陶瓷濾波器 taocilvboqi -
KDS晶振 KDS CRYSTAL -
精工晶振 SEIKO CRYSTAL -
村田晶振 muRata CRYSTAL -
西鐵城晶振 CITIZEN CRYSTAL -
愛普生晶振 EPSON CRYSTAL -
微孔霧化片 微孔霧化片 -
臺灣加高晶體 H.ELE -
進口京瓷晶體 KYOCERA -
日本NDK晶體 進口NDK晶體 -
日本大河晶體 RIVER -
美國CTS晶體 CTS石英晶體 -
臺灣希華晶體 臺灣希華 -
臺灣鴻星晶體 HOSONIC -
臺灣TXC晶體 TXC CRYSTAL -
臺灣泰藝晶體 TAITIEN CRYSTAL -
臺灣亞陶晶體 百利通亞陶 -
臺灣NSK晶體 NSK CRYSTAL -
瑪居禮晶振 臺灣瑪居禮晶振 -
富士晶振 日本富士貼片晶振 -
SHINSUNG晶振 韓國進口SHINSUNG晶振 -
SMI晶振 日本SMI貼片晶振 -
Lihom晶振 韓國Lihom晶振 -
NAKA晶振 日本納卡株式會社晶振 -
AKER晶振 臺灣安碁貼片晶振 -
NKG晶振 NKG石英晶振 -
NJR晶振 日本NJR晶振 -
Sunny晶振 Sunny CRYSTAL -
Statek晶振 Statek貼片晶體 -
Pletronics晶振 Pletronics CRYSTAL -
Jauch晶振 Jauch Crystal -
日蝕晶振 Ecliptek Crystal -
IDT晶振 IDT進口晶振 -
格林雷晶振 Greenray恒溫晶振 -
高利奇晶振 Golledge石英晶體振蕩器 -
維管晶振 Vectron Crystal -
拉隆晶振 Raltron CRYSTAL -
瑞康晶振 Rakon石英晶體 -
康納溫菲爾德晶振 ConnorWinfield Crystal -
ECS晶振 ECS CRYSTAL -
Abracon晶振 Abracon 石英振蕩器 -
CTS晶振 西迪斯晶振 -
SiTime晶振 SiTime可編碼振蕩器 -
微晶晶振 Microcrystal Crystal -
AEK晶振 AEK CRYSTAL -
AEL晶振 AEL CRYSTAL -
Cardinal晶振 Cardinal貼片晶體 -
Crystek晶振 Crystek石英晶振 -
Fox晶振 Fox有源晶振 -
Frequency晶振 Frequency Crystal -
GEYER晶振 GEYER CRYSTAL -
KVG晶振 KVG石英晶體 -
ILSI晶振 ILSI CRYSTAL -
Euroquartz晶振 Euroquartz crystal -
MMDCOMP晶振 MMDCOMP貼片晶振 -
MtronPTI晶振 MtronPTI晶體諧振器 -
QANTEK晶振 QANTEK石英晶振 -
QuartzCom晶振 QuartzCom石英晶體 -
Quarztechnik晶振 Quarztechnik Crystal -
Suntsu晶振 Suntsu石英貼片晶振 -
Transko晶振 Transko crystal -
Wi2Wi晶振 Wi2Wi Crystal -
Rubyquartz晶振 進口Rubyquartz CRYSTAL -
ACT晶振 ACT石英晶振 -
Oscilent晶振 Oscilent CRYSTAL -
ITTI晶振 ITTI石英晶體諧振器 -
MTI-milliren晶振 MTI Crystal -
PDI晶振 PDI CRYSTAL -
IQD晶振 IQD CRYSTAL -
Microchip晶振 Microchip crystal -
Silicon晶振 Silicon Crystal -
安德森晶振 Anderson Crystal -
富通晶振 Fortiming Crystal -
CORE晶振 CORE CRYSTAL -
NIPPON晶振 NIPPON石英晶體振蕩器 -
NIC晶振 NIC Crystal -
QVS晶振 QVS CRYSTAL -
Bomar晶振 Bomar Crystal -
Bliley晶振 Bliley Crystal -
GED晶振 GED CRYSTAL -
FILTRONETICS晶振 FILTRONETICS CRYSTAL -
Standard晶振 Standard Crystal -
Q-Tech晶振 美國Q-Tech晶振 -
Wenzel晶振 Wenzel Crystal -
NEL晶振 美國NEL晶振 -
EM晶振 EM CRYSTAL -
PETERMANN晶振 PETERMANN CRYSTAL -
FCD-Tech晶振 荷蘭晶振FCD-Tech -
HEC晶振 HEC CRYSTAL -
FMI晶振 FMI CRYSTAL -
麥克羅比特晶振 Macrobizes Crystal -
AXTAL晶振 AXTAL CRYSTAL -
ARGO晶振 ARGO晶振公司是專業(yè)提供和設計波段頻率控制設備和微波無線通信零部件.我們還分銷日本,歐洲和美國的一些知名品牌零部件.我們致力于發(fā)展與計算機,IT和無線通信公司無任何界限的信息時代.我們秉承經(jīng)營者的踏實,誠懇的態(tài)度,互惠互利的精神,實現(xiàn)共贏的目標,以誠信為本,誠信為本,公平交易為宗旨,以誠信,勤勉,誠信,精神質(zhì)量第一,客戶滿意的經(jīng)營理念,將以優(yōu)良的產(chǎn)品質(zhì)量,優(yōu)惠的價格,優(yōu)質(zhì)的服務與您建立長期穩(wěn)定的合作關系,共創(chuàng)輝煌事業(yè).
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SKYWORKS晶振
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Renesas瑞薩晶振
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貼片石英晶振 SMD CRYSTAL -
貼片陶瓷晶振 SMD 陶振 -
有源晶振 Oscillator -
石英晶體振蕩器 OSC石英晶體振蕩器
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壓控晶振 VCXO進口晶振
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壓控溫補晶振 VC-TCXO CRYSTAL
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恒溫晶振 OCXO有源晶振
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差分晶振 差分石英晶體振蕩器
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數(shù)碼產(chǎn)品
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醫(yī)療產(chǎn)品
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汽車產(chǎn)品
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移動產(chǎn)品
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智能家居
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網(wǎng)絡設備
- 規(guī)格型號：30256698
- 頻率：54MHz
- 尺寸：3225mm
- 產(chǎn)品描述：7X54070001,TXC有源晶振,耐高溫晶振,采用低功耗電路設計,工作電流低至幾毫安級別,可有效減少設備整體能耗,尤其適合汽車電子,便攜式工業(yè)檢測設備等對功耗敏感的場景.
7X54070001,TXC有源晶振,耐高溫晶振
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7X54070001,TXC有源晶振,耐高溫晶振
該型號晶振深度融合TXC數(shù)十年的石英晶體研發(fā)經(jīng)驗,采用先進的高精度石英晶體切割工藝與密封式封裝技術(shù),在常溫條件下,頻率精度可嚴格控制在±10ppm以內(nèi),這一精度水平完全滿足通信,工業(yè)控制等領域?qū)r鐘信號的高精準要求.更值得關注的是,即便在高低溫頻繁切換的波動區(qū)間,通過內(nèi)部溫度補償電路的精準調(diào)節(jié),其頻率漂移量仍能嚴格控制在行業(yè)領先的±25ppm以內(nèi),確保設備在復雜溫度環(huán)境下仍能保持穩(wěn)定運行.同時,臺灣TXC晶振在生產(chǎn)過程中建立了嚴格的質(zhì)量管控體系,從原材料篩選到成品檢測,每一個環(huán)節(jié)都經(jīng)過精密把控,使得7X54070001的產(chǎn)品批次間一致性優(yōu)異,不同批次產(chǎn)品的頻率參數(shù)偏差極小,能完美滿足批量生產(chǎn)中對時鐘信號統(tǒng)一性的嚴苛要求,廣泛適配5G通信模塊,工業(yè)物聯(lián)網(wǎng)傳感器,高精度工業(yè)控制芯片,醫(yī)療設備控制單元等對頻率穩(wěn)定性要求極高的元器件,為下游產(chǎn)品的性能穩(wěn)定性提供有力保障.
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7X54070001,TXC有源晶振,耐高溫晶振
| 原廠型號 Originalmodel： | 7X54070001 | 品牌brand： | TXC |
| Manufacturer品牌 | TXC | OperatingTemperature溫度 | -40°C ~ 105°C |
| Series型號 | 7X | Current-Supply(Max) | 15mA |
| Type類型 | XO | PackageHeight高度 | 1.1mm |
| Frequency頻率 | 54MHz | Termination 腳位 | 4 pad |
| 輸出方式 Output： | CMOS | PackageType 封裝類型 | 4-SMD |
| Voltage-Supply電壓 | 3.3V | Packaging 包裝 | TapeandReel |
| FrequencyStability頻率穩(wěn)定度 | ±50ppm | 安裝方式 Installation： | Surfacemount |
| Size/Dimension尺寸 | 3225石英貼片晶振 | 最小包裝數(shù)MPQ： | 3000 |
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7X54070001,TXC有源晶振,耐高溫晶振
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7X54070001,TXC有源晶振,耐高溫晶振
| 8NE-20.000MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 20 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-40.000MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 40 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-27.000MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 27 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-37.400MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 37.4 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8NE-38.400MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 38.4 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-27.000MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 27 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-24.000MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 24 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-25.000MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 25 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-38.400MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 38.4 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8WE-20.000MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 20 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-24.000MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 24 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-40.000MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 40 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-30.000MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 30 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-25.000MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 25 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-25.000MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 25 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-37.400MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 37.4 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-37.400MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 37.4 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-24.576MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 24.576 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-33.333MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 33.333 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-20.000MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 20 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-37.400MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 37.4 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-33.333MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 33.333 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8NE-30.000MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 30 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-27.000MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 27 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-40.000MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 40 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-25.000MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 25 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8NE-24.576MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 24.576 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8WE-38.400MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 38.4 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-25.000MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 25 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-38.400MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 38.4 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-27.000MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 27 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-37.400MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 37.4 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-25.000MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 25 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8WE-38.400MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 38.4 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8WE-30.000MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 30 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8NE-24.000MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 24 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8WE-40.000MDJ-T | TXC CORPORATION | 8WE | XO (Standard) | 40 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-40.000MBJ-T | TXC CORPORATION | 8NE | XO (Standard) | 40 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-33.333MBJ-T | TXC CORPORATION | 8WE | XO (Standard) | 33.333 MHz | CMOS (Low EMI) | 3.3V | ±50ppm |
| 8WE-20.000MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 20 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-30.000MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 30 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8WE-24.000MCJ-T | TXC CORPORATION | 8WE | XO (Standard) | 24 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-27.000MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 27 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 8NE-24.576MCJ-T | TXC CORPORATION | 8NE | XO (Standard) | 24.576 MHz | CMOS (Low EMI) | 2.5V | ±50ppm |
| 8NE-30.000MDJ-T | TXC CORPORATION | 8NE | XO (Standard) | 30 MHz | CMOS (Low EMI) | 1.8V | ±50ppm |
| 7CL-32.000MBD-T | TXC CORPORATION | 7CL | XO (Standard) | 32 MHz | CMOS | 3.3V | ±25ppm |
| 7CL-32.3330MBD-T | TXC CORPORATION | 7CL | XO (Standard) | 32.333 MHz | CMOS | 3.3V | ±25ppm |
| 7CL-14.31818MBD-T | TXC CORPORATION | 7CL | XO (Standard) | 14.31818 MHz | CMOS | 3.3V | ±25ppm |
| 7CL-6.000MBD-T | TXC CORPORATION | 7CL | XO (Standard) | 6 MHz | CMOS | 3.3V | ±25ppm |
| 7CL-166.000MDD-T | TXC CORPORATION | 7CL | XO (Standard) | 166 MHz | CMOS | 1.8V | ±25ppm |
| 7C-12.288MBB-T | TXC CORPORATION | 7C | XO (Standard) | 12.288 MHz | CMOS | 3.3V | ±50ppm |
| 7C-33.000MDB-T | TXC CORPORATION | 7C | XO (Standard) | 33 MHz | CMOS | 1.8V | ±50ppm |
| 7C-1.8432MBB-T | TXC CORPORATION | 7C | XO (Standard) | 1.8432 MHz | CMOS | 3.3V | ±50ppm |
| 7C-38.400MDA-T | TXC CORPORATION | 7C | XO (Standard) | 38.4 MHz | CMOS | 1.8V | ±25ppm |
| 7C-49.152MBB-T | TXC CORPORATION | 7C | XO (Standard) | 49.152 MHz | CMOS | 3.3V | ±50ppm |
| 7C-54.000MBB-T | TXC CORPORATION | 7C | XO (Standard) | 54 MHz | CMOS | 3.3V | ±50ppm |
| 7C-9.8304MBD-T | TXC CORPORATION | 7C | XO (Standard) | 9.8304 MHz | CMOS | 3.3V | ±25ppm |
| 7C-2.048MBD-T | TXC CORPORATION | 7C | XO (Standard) | 2.048 MHz | CMOS | 3.3V | ±25ppm |
| 7C-8.192MBB-T | TXC CORPORATION | 7C | XO (Standard) | 8.192 MHz | CMOS | 3.3V | ±50ppm |
| 7C-30.000MBB-T | TXC CORPORATION | 7C | XO (Standard) | 30 MHz | CMOS | 3.3V | ±50ppm |
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