Microchip高性能可編程振蕩器與硅MEMS技術(shù)有何關(guān)聯(lián)之處?DSC1122BE1-025.0000，Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.
Microchip Technology Inc .是微控制器和模擬半導(dǎo)體的領(lǐng)先供應(yīng)商，為全球數(shù)千種不同的客戶應(yīng)用提供低風(fēng)險(xiǎn)有源晶振產(chǎn)品開發(fā)、更低的總系統(tǒng)成本和更快的上市時(shí)間。總部設(shè)在亞利桑那州錢德勒，微芯片提供卓越的技術(shù)支持以及可靠的交付和質(zhì)量。

Microchip高性能可編程振蕩器與硅MEMS技術(shù)有何關(guān)聯(lián)之處?DSC1122BE1-025.0000，Microchip晶振公司發(fā)布編碼DSC1122BE1-025.0000，DSC1102和DSC1122系列高性能振蕩器利用成熟的硅MEMS技術(shù)，在寬電源電壓和溫度范圍內(nèi)提供出色的抖動(dòng)和穩(wěn)定性。通過(guò)消除對(duì)石英或SAW技術(shù)的需求，MEMS振蕩器顯著提高了可靠性并加快了產(chǎn)品開發(fā)，同時(shí)滿足各種通信、存儲(chǔ)和網(wǎng)絡(luò)應(yīng)用的嚴(yán)格時(shí)鐘性能標(biāo)準(zhǔn)。DSC1102具有待機(jī)特性，當(dāng)en引腳被拉低時(shí)，它可以完全關(guān)斷；而對(duì)于DSC1122，當(dāng)en為低電平時(shí)，僅輸出禁用。兩款振蕩器均采用工業(yè)標(biāo)準(zhǔn)封裝，包括小型3.2毫米x 2.5mm毫米，是標(biāo)準(zhǔn)6引腳LVPECL石英晶體振蕩器的替代產(chǎn)品。

Manufacturer Part Number原廠代碼	Manufacturer品牌	Series型號(hào)	Part Status	Type 類型	Frequency 頻率	Voltage - Supply電壓
DSC1121AI1-156.2500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1121AI2-024.5760T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	24.576MHz	2.25 V ~ 3.6 V
DSC1121AI2-200.0000T	Microchip可編程振蕩器	DSC1121	Obsolete	MEMS (Silicon)	200MHz	2.25 V ~ 3.6 V
DSC1121AI5-125.0032T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	125.0032MHz	2.25 V ~ 3.6 V
DSC1121AI5-125.0038T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	125.0038MHz	2.25 V ~ 3.6 V
DSC1121AL2-020.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	20MHz	2.25 V ~ 3.6 V
DSC1121AL2-025.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1121BI5-050.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	50MHz	2.25 V ~ 3.6 V
DSC1121BI5-100.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1121BI5-125.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1121BM5-030.0000T	Microchip可編程振蕩器	DSC1121	Obsolete	MEMS (Silicon)	30MHz	2.25 V ~ 3.6 V
DSC1121CE5-100.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1121CE5-108.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	108MHz	2.25 V ~ 3.6 V
DSC1121CI2-031.2500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	31.25MHz	2.25 V ~ 3.6 V
DSC1121CL2-020.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	20MHz	2.25 V ~ 3.6 V
DSC1121CL2-024.7500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	24.75MHz	2.25 V ~ 3.6 V
DSC1121CL5-024.7500T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	24.75MHz	2.25 V ~ 3.6 V
DSC1121CM1-027.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	27MHz	2.25 V ~ 3.6 V
DSC1121CM2-027.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	27MHz	2.25 V ~ 3.6 V
DSC1121CM2-032.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	32MHz	2.25 V ~ 3.6 V
DSC1121NI1-025.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1121NI1-065.0000T	Microchip可編程振蕩器	DSC1121	Active	MEMS (Silicon)	65MHz	2.25 V ~ 3.6 V
DSC1122AE1-123.5200T	Microchip晶振	DSC1122	Active	MEMS (Silicon)	123.52MHz	2.25 V ~ 3.6 V
DSC1122AE1-312.5000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	312.5MHz	2.25 V ~ 3.6 V
DSC1122AE2-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122AI1-133.3300T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	133.33MHz	2.25 V ~ 3.6 V
DSC1122AI1-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122AI1-159.3750T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	159.375MHz	2.25 V ~ 3.6 V
DSC1122AI2-025.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1122AI5-375.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	375MHz	2.25 V ~ 3.6 V
DSC1122BE1-025.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	25MHz	2.25 V ~ 3.6 V
DSC1122CE2-150.0000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	150MHz	2.25 V ~ 3.6 V
DSC1122CI1-155.5200T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1122CI2-148.3516T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1122CI2-148.5000T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	148.5MHz	2.25 V ~ 3.6 V
DSC1122CI2-155.5200T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1122CL1-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122NE2-156.2500T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	156.25MHz	2.25 V ~ 3.6 V
DSC1122NI1-078.1250T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	78.125MHz	2.25 V ~ 3.6 V
DSC1122NI1-133.3300T	Microchip可編程振蕩器	DSC1122	Active	MEMS (Silicon)	133.33MHz	2.25 V ~ 3.6 V
DSC1123AI2-148.3516T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1123AI2-155.5200T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	155.52MHz	2.25 V ~ 3.6 V
DSC1123AI2-212.5000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	212.5MHz	2.25 V ~ 3.6 V
DSC1123AI5-110.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	110MHz	2.25 V ~ 3.6 V
DSC1123AL2-125.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1123BE2-100.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	100MHz	2.25 V ~ 3.6 V
DSC1123BE2-125.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	125MHz	2.25 V ~ 3.6 V
DSC1123CE2-062.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	62MHz	2.25 V ~ 3.6 V
DSC1123CE2-148.3516T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	148.3516MHz	2.25 V ~ 3.6 V
DSC1123CE2-148.5000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	148.5MHz	2.25 V ~ 3.6 V
DSC1123CE2-200.0000T	Microchip可編程振蕩器	DSC1123	Active	MEMS (Silicon)	200MHz	2.25 V ~ 3.6 V

產(chǎn)品特性：低均方根相位抖動(dòng):< 1 ps(典型值。)，高穩(wěn)定性:10、25、50 ppm，工業(yè)級(jí):-40攝氏度至85攝氏度，延伸文件系統(tǒng)商用:-20攝氏度至70攝氏度，高電源噪聲抑制:-50dBc，短交貨期:2周，寬頻率。范圍:2.3至460兆赫。2.5毫米x 2.0mm毫米、3.2毫米x 2.5mm毫米、5.0毫米x 3.2mm毫米和7.0毫米x 5.0mm毫米，符合軍用標(biāo)準(zhǔn)883，MTF比石英晶體振蕩器高20倍，低電流消耗，電源電壓范圍為2.25V至3.6V，待機(jī)和輸出使能功能，無(wú)鉛且符合RoHS標(biāo)準(zhǔn)，提供LVDS和HCSL版本.
應(yīng)用程序：存儲(chǔ)區(qū)域網(wǎng)絡(luò)，SATA、SAS、光纖通道，無(wú)源光網(wǎng)絡(luò)，-EPON，10G-EPON，GPON，10G-GPON 以太網(wǎng) - 1G、10GBASE-T/KR/LR/SR和FCoE，高清/標(biāo)清/SDI視頻和監(jiān)控.